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Composite Transistors
XN01872 (XN1872)
Silicon n-channel enhancement MOSFET
Unit: mm
For switching Features
* Two elements incorporated into one package (Source-coupled FETs) * Reduction of the mounting area and assembly cost by one half
3
2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 4 5
0.16+0.10 -0.06
1.50+0.25 -0.05
2.8+0.2 -0.3
2 0.30+0.10 -0.05 10
1
Basic Part Number
* 2SK0621 (2SK621) x 2
1.1+0.2 -0.1
(0.65)
Parameter Drain-source surrender voltage Gate-source voltage (Drain open) Drain curennt Peak drain current Total power dissipation Channel temperature Storage temperature
Symbol VDSS VGSO ID IDP PT Tch Tstg
Rating 50 8 100 200 300 150 -55 to +150
Unit V V mA mA mW C C
1: Drain (FET1) 2: Drain (FET2) 3: Gate (FET2) EIAJ: SC-74A
0 to 0.1
Absolute Maximum Ratings Ta = 25C
4: Source 5: Gate (FET1) Mini5-G1 Package
Marking Symbol: 5U Internal Connection
3 FET2 4 5 FET1
Electrical Characteristics Ta = 25C 3C
Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Output voltage high-level Output voltage low-level Input resistance *1 Turn-on time *2 Turn-off time *2 Short-circuit forward transfer capacitance (Common-source) Symbol VDSS IDSS IGSS Vth RDS(on) Yfs VOH VOL R1+R2 ton toff Ciss VDD = 5 V, VGS = 0 V to 5 V, RL = 200 VDD = 5 V, VGS = 5 V to 0 V, RL = 200 VDS = 5 V, VGS = 0, f = 1 MHz Conditions ID = 100 A, VGS = 0 VDS = 10 V, VGS = 0 VGS = 8 V, VDS = 0 ID = 100 A, VDS = VGS ID = 20 mA, VGS = 5 V ID = 20 mA, VDS = 5 V, f = 1 kHz VDS = 5 V, VGS = 1 V, RL = 200 VDS = 5 V, VGS = 5 V, RL = 200
2
1.1+0.3 -0.1
1
Min 50
Typ
Max
Unit V A A V mS V
10 40 1.5 80 3.5 50 20 4.5 1.0 100 200 1.0 1.0 9 15 30
V k s s pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Resistance ratio R1 /R2 = 1/50 *2: Pulse measurement Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004 SJJ00035BED
0.40.2
5
1
XN01872
PT Ta
500
ID VDS
120 Ta = 25C
120
ID VGS
VDS = 5 V
Total power dissipation PT (mW)
400
100
100
Drain current ID (mA)
Drain current ID (mA)
VGS = 6.0 V 80 5.5 V 5.0 V 4.5 V 40
80
Ta = -25C 25C
300
60
60
75C
200
4.0 V 3.5 V 3.0 V
40
100
20
20
0
0
40
80
120
160
0
0
0
2
4
6
8
10
0
2
4
6
8
10
Ambient temperature Ta (C)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Yfs VDS
Short-circuit forward transfer capacitance (Common source) Ciss , Short-circuit output capacitance (Common source) Coss (pF)
50
Ciss , Coss VDS
Drain-source ON resistance RDS(on) ()
VDS = 5 V Ta = 25C
RDS(on) VGS
120 ID = 20 mA
12
Forward transfer admittance Yfs (mS)
40
10
VGS = 0 f = 1 MHz Ta = 25C Ciss
100
8
80
30
6
60
Ta = 75C 25C -25C
20
4 Coss 2
40
10
20
0
0
2
4
6
8
10
0 0.1
0 1 10 100
0
2
4
6
8
10
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
VIN IO
1 000 VO = 1 V Ta = 25C
Input voltage VIN (V)
100
10
1
0.1 0.1
1
10
100
Output current IO (mA)
2
SJJ00035BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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